发明名称 |
Silicide glue layer for W-CVD plug application |
摘要 |
A new method of tungsten plug metallization using a silicide glue layer is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer is provided covering the semiconductor device structures wherein a contact opening is made through the insulating layer to one of the semiconductor device structures. A silicide layer is deposited conformally over the surface of the insulating layer and within the contact opening as a combined ohmic contact and glue layer. In a first embodiment, a tungsten layer is deposited overlying the silicide layer. The tungsten layer not within the contact opening is removed to complete the formation of the tungsten plug metallization. In a second embodiment, the silicide layer not within the contact opening is selectively removed and a tungsten layer is selectively deposited overlying the silicide layer within the contact opening to complete formation of the tungsten plug metallization in the fabrication of an integrated circuit.
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申请公布号 |
US6184130(B1) |
申请公布日期 |
2001.02.06 |
申请号 |
US19970965313 |
申请日期 |
1997.11.06 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
KU TZU-KUN;CHEN HSUEH-CHUNG;LOU CHINE-GIE |
分类号 |
H01L21/768;H01L23/522;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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