| 摘要 |
In a method of forming a buried plug and an interconnection over the same, a conductive film is deposited not only over a top surface of an insulation film extending over a semiconductor substrate but also within a contact hole formed in the insulation film so that the conductive film over the top surface of the insulation film has a thickness which is thicker than a predetermined thickness, and a top surface of the conductive film is planarized so that the conductive film over the insulation film has the predetermined thickness whereby an interconnection layer is unitarily formed with a conductive plug conductive film buried within the contact hole.
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