| 摘要 |
A method of forming a semiconductor device, wherein, a silicon oxide film formed on a P-type silicon substrate is patterned, after which element separating trenches with a wider aperture width and a buried layer drawing trench with a narrower aperture width are formed at the same time. The buried layer drawing trench is filled with a conductive film such as a tungsten film, which also forms concave parts at the element separating trenches. The semiconductor is exposed at the bottom parts of the element separating trenches to be etched and form complete element separating trenches penetrating through the buried layer.
|
