Method of forming a MOSFET transistor with a shallow abrupt retrograde dopant profile

摘要

In accordance with the present invention, an amorphous layer is formed in a crystalline substrate (e.g., the channel region of a MOSFET transistor) by, for example, implanting ions of an inert specie such as germanium. A dopant is implanted so that it overlaps with the amorphous layer. Subsequently, low temperature recrystallization of the amorphous layer leads to an abrupt retrograded layer of active dopant in the channel region of the MOSFET. This retrograded dopant layer could be formed before or after the formation of the gate electrode.