发明名称 |
Semiconductor integrated circuit memory |
摘要 |
A semiconductor memory includes memory cell blocks, a burst-length information generating circuit which generates burst-length information based on a burst length, and a block enable circuit which receives the burst-length information. The block enable circuit selectively enables one of the memory cell blocks when the burst length is equal to or shorter than a predetermined burst length and selectively enables a plurality of memory cell blocks based on the burst length when the burst length is longer than the predetermined burst length. Data are read from the above-mentioned one or plurality of memory cell blocks.
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申请公布号 |
US6185149(B1) |
申请公布日期 |
2001.02.06 |
申请号 |
US19990340147 |
申请日期 |
1999.06.28 |
申请人 |
FUJITSU LIMITED |
发明人 |
FUJIOKA SHINYA;TAGUCHI MASAO;SATO YASUHARU;SUZUKI TAKAAKI;AIKAWA TADAO;MATSUZAKI YASUROU;UCHIDA TOSHIYA |
分类号 |
G11C7/10;(IPC1-7):G11C8/00 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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