发明名称 Semiconductor integrated circuit memory
摘要 A semiconductor memory includes memory cell blocks, a burst-length information generating circuit which generates burst-length information based on a burst length, and a block enable circuit which receives the burst-length information. The block enable circuit selectively enables one of the memory cell blocks when the burst length is equal to or shorter than a predetermined burst length and selectively enables a plurality of memory cell blocks based on the burst length when the burst length is longer than the predetermined burst length. Data are read from the above-mentioned one or plurality of memory cell blocks.
申请公布号 US6185149(B1) 申请公布日期 2001.02.06
申请号 US19990340147 申请日期 1999.06.28
申请人 FUJITSU LIMITED 发明人 FUJIOKA SHINYA;TAGUCHI MASAO;SATO YASUHARU;SUZUKI TAKAAKI;AIKAWA TADAO;MATSUZAKI YASUROU;UCHIDA TOSHIYA
分类号 G11C7/10;(IPC1-7):G11C8/00 主分类号 G11C7/10
代理机构 代理人
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