METHOD FOR OPENING PAD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for opening a pad of a semiconductor device is provided to prevent a charge-up phenomenon in a pad opening process by stabilizing electrification of gas in an etch process and an ashing process. CONSTITUTION: The first tungsten titanium layer(22), an aluminium layer(23), and the second tungsten titanium layer are laminated on a predetermined region of a semiconductor substrate(21). An oxide layer(25) and a silicon nitride layer(26) are deposited on a whole surface of the semiconductor substrate(21). A photoresist layer(27) is formed on the silicon nitride layer(26). The photoresist layer(27) is patterned selectively. The silicon nitride layer(26) is etched by using an etch gas. The oxide layer(25) is etched by using the patterned photoresist layer(27) as a mask. The second tungsten titanium layer(24) is etched by performing an over-etch process. The photoresist layer(27) is removed by performing an ashing process.