| 摘要 |
PURPOSE: A method for manufacturing a metal interconnection layer is provided to prevent an increase of contact resistance between a semiconductor substrate and the metal interconnection layer, by implanting silicon ions into the metal interconnection layer containing no silicon so that the silicon density in the lower portion of the metal interconnection layer increases to prevent a spiking phenomenon. CONSTITUTION: An interlayer dielectric(23) having a contact hole exposing a lower conductive layer(22) is formed on the semiconductor substrate(21) having the lower conductive layer. The metal interconnection layer(25) having no silicon is formed on the interlayer dielectric to cover the contact hole. Silicon ions are implanted into the metal interconnection layer to increase the silicon density of the lower portion of the metal interconnection layer. A heat treatment process is performed to make an ohmic contact between the metal interconnection layer having an increased silicon density and the lower conductive layer.
|
