| 摘要 |
PURPOSE: A method for manufacturing a metal interconnection of a semiconductor device is provided to form a copper thin film of which the step coverage is improved by a mutual diffusion of copper atoms and silicon atoms, by using a chemical vapor deposition(CVD) method to form a polysilicon layer, by using physical vapor deposition(PVD) method to form the copper thin film and by performing a heat treatment process in an atmosphere of nitrogen or ammonia. CONSTITUTION: After an insulation layer(22) is formed on a semiconductor substrate(21) having various elements for manufacturing the semiconductor device, a selected region of the insulation layer is etched to form a trench for the metal interconnection exposing a predetermined region of the substrate. A barrier metal layer(23) is formed. The polysilicon layer is filled in the trench, and the copper thin film(25A) is formed on the resultant structure. A heat treatment process is performed to make a mutual diffusion of the silicon atoms of the polysilicon layer and the copper atoms of the copper thin film so that the copper thin film is formed in the trench portion. A polysilicon layer is formed on the resultant structure. An etch-back process is performed to remove the polysilicon layer and the barrier metal layer so that a copper metal interconnection is formed inside the trench.
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