发明名称 |
METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor wafer (W) to be preprocessed is exposed to WF6 gas supplied by a gas source (10A) for a predetermined time to suppress the formation of nuclei for the growth of metal film. The gas source (10A) and a gas source (10B) deliver WF6 gas and NH3 gas, respectively, to the surface of the preprocessed semiconductor wafer (W) for a predetermined time. As a result, metallic compound film, i.e., tungsten nitride, having a rough surface is formed on the semiconductor wafer (W). A controller (51) controls the operation of the gas sources (10A, 10B), for example, according to a predetermined program.
|
申请公布号 |
WO0107677(A1) |
申请公布日期 |
2001.02.01 |
申请号 |
WO2000JP04889 |
申请日期 |
2000.07.21 |
申请人 |
TOKYO ELECTRON LIMITED;KAWANO, YUMIKO;YAMASAKI, HIDEAKI;CHUNG, GISHI |
发明人 |
KAWANO, YUMIKO;YAMASAKI, HIDEAKI;CHUNG, GISHI |
分类号 |
C23C16/02;C23C16/34;C23C16/44;C23C16/455;H01L21/285;(IPC1-7):C23C16/34;H01L21/822;H01L27/04 |
主分类号 |
C23C16/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|