| 摘要 |
<p>Methods of forming conductive capacitor plugs, methods of forming capacitor contact openings, and methods of forming memory arrays are described. In one embodiment, a conductive capacitor plug (76) is formed to extend from proximate a substrate node location to a location elevationally above all conductive material of an adjacent bit line (56). The capacitor contact opening is etched through a first insulative material received over a bit line and a word line substantially selective relative to a second insulative material covering portions of the bit line and the word line. The opening is etched to a substrate location proximate the word line in a self-aligning manner relative to both the bit line and the word line. In a preferred embodiment, capacitor-over-bit line memory arrays are formed.</p> |
