发明名称 SOLID STATE CAPACITORS AND METHODS OF MANUFACTURING THEM
摘要 The present invention relates to the field of solid state capacitors. The invention particularly relates to capacitors of the type in which a powder-formed valve action material, typically tantalum, forms a highly porous anode body portion of a solid state capacitor. According to one aspect of the present invention there is provided a method of manufacturing a solid state capacitor comprising: providing an electrically conducting substrate; forming a plurality of upstanding porous electrically conducting anode bodies on a surface of the substrate, each body electrically connected to the substrate; forming an electrically insulating layer on the exposed surface area provided by the porous bodies; forming a conducting layer on the insulating layer; dividing the substrate into capacitor units, each comprising a portion of substrate provided with a porous capacitive body, and for each unit: providing a cathode terminal in electrical contact with the conducting layer on the capacitive body, providing an anode terminal in electrical contact with the substrate portion, characterised in that the cathode terminal is formed on a surface of the capacitive body distal to the substrate portion and the anode terminal is formed adjacent and substantially co-planar with the cathode terminal, an electrically conducting wick providing electrical contact between the substrate portion and the anode terminal, so that the capacitors have anode and cathode terminals on a common face. By forming a capacitor with anode and cathode connections on a common face the footprint of the capacitor is minimized, whilst facilitating connection with a circuit board.
申请公布号 WO0108178(A1) 申请公布日期 2001.02.01
申请号 WO2000GB02630 申请日期 2000.07.07
申请人 AVX LIMITED;HUNTINGTON, DAVID 发明人 HUNTINGTON, DAVID
分类号 H01G9/08;H01G9/00;H01G9/004;H01G9/012;H01G9/052;(IPC1-7):H01G9/012 主分类号 H01G9/08
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