A plating method capable of performing planarization with a quality higher than conventional, comprising dipping an object (10) to be processed and an electrode plate (20) in an aqueous solution containing ions of a target metal, depositing the metal on the object by allowing a current to flow in the forward direction between the object and the electrode plate to form a plating film having a thickness greater than necessary on the object, allowing a current to flow in the reverse direction between the object (10) and the electrode plate (20) to uniformly remove at least unnecessary part of the plating film. A plating device and a plating system are also disclosed.
申请公布号
WO0107687(A1)
申请公布日期
2001.02.01
申请号
WO2000JP04988
申请日期
2000.07.26
申请人
TOKYO ELECTRON LIMITED;NIUYA, TAKAYUKI;ONO, MICHIHIRO;GOTO, HIDETO;PARK, KYUNGHO;MARUMO, YOSHINORI;SHIMIZU, KATSUSUKE