| 摘要 |
<p>A semiconductor wafer (W) to be preprocessed is exposed to WF6 gas supplied by a gas source (10A) for a predetermined time to suppress the formation of nuclei for the growth of metal film. The gas source (10A) and a gas source (10B) deliver WF6 gas and NH3 gas, respectively, to the surface of the preprocessed semiconductor wafer (W) for a predetermined time. As a result, metallic compound film, i.e., tungsten nitride, having a rough surface is formed on the semiconductor wafer (W). A controller (51) controls the operation of the gas sources (10A, 10B), for example, according to a predetermined program.</p> |
