| 发明名称 |
METHOD FOR MAKING A DEVICE COMPRISING LAYERS OF PLANES OF QUANTUM DOTS |
| 摘要 |
The invention concerns a method for forming on a Ge or Si monocrystalline substrate successive Si/Ge, Si/SiGe or Si/SiGe/Ge layers for a Ge substrate and inversely for a Si substrate, and the electrochemical treatment of the stack of layers to make the layers porous and form therein residual crystallites. The invention is applicable to devices comprising layers of planes of quantum drops.
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| 申请公布号 |
WO0108225(A1) |
申请公布日期 |
2001.02.01 |
| 申请号 |
WO2000FR02000 |
申请日期 |
2000.07.11 |
| 申请人 |
FRANCE TELECOM;BENSAHEL, DANIEL;CAMPIDELLI, YVES;HERNANDEZ, CAROLINE |
发明人 |
BENSAHEL, DANIEL;CAMPIDELLI, YVES;HERNANDEZ, CAROLINE |
| 分类号 |
H01L21/306;H01L29/12;H01L29/15;H01L33/34;H01S5/32;H01S5/34;(IPC1-7):H01L29/15 |
主分类号 |
H01L21/306 |
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