发明名称 PROCESS AND APPARATUS FOR TREATING A WORKPIECE SUCH AS A SEMICONDUCTOR WAFER
摘要 <p>A novel chemistry, system and application technique reduces the contamination of semiconductor wafers and similar substrates. A stream of liquid chemical is applied to the workpiece surface (20). Ozone is delivered either into the liquid process stream (60) or into the process environment (15). The Ozone is preferably generated by a high capacity ozone generator (75). The chemical stream, which may be in the form of a liquid or vapor, is applied to the wafer (20) in a system which enables control of the boundary layer which forms on the workpiece surface. The chemical stream may include components such as ammonium hydroxide for simultaneous particle and organic removal, another chemical to raise the pH of the solution, or other chemical additives designed to accomplish one or more specific cleaning tasks. The particular application technique is configured to develop and control a boundary layer of the liquid on the wafer surface.</p>
申请公布号 WO2001007177(A1) 申请公布日期 2001.02.01
申请号 US2000020036 申请日期 2000.07.21
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