| 摘要 |
The invention comprises a semiconductor device comprising a first NTFT and a second NTFT on a substrate, each of the first NTFT and the second NTFT comprising a semiconductor layer having a channel forming region, a first impurity region, a second impurity region, and a third impurity region formed between the first impurity region and the second impurity region; and a gate electrode adjacent to the semiconductor layer with a gate insulating film interposed therebetween, wherein the second impurity region is located in the semiconductor layer so as to overlap the gate electrode with the gate insulating film interposed therebetween, wherein a length of the second impurity region formed in the first NTFT differs from a length of the second impurity region formed in the second NTFT, and wherein an operating voltage of the second NTFT is greater than an operating voltage of the first NTFT. |
