Semiconductor workpiece processing apparatus

摘要

A wafer processing apparatus includes a processing chamber, a chuck (104) arranged in the processing chamber for supporting a wafer (Wafer), and a pedestal (102) which is spaced apart from the chuck. A first gas layer is provided between the chuck and the wafer and a second gas layer is provided in the space between the pedestal and the chuck. The pressure of the first gas layer is controlled to be in a pressure range in which a thermal conductivity of the first gas layer is substantially constant with respect changes in pressure of the first gas layer and the pressure of the second gas layer is controlled so as to control an amount of heat transferred to/from the pedestal. <IMAGE>