Liquid-phase growth process of compound semiconductor

摘要

A liquid-phase growth process of a compound semiconductor which is capable of effectively controlling the generation of a surface defect and improve the product quality and production yield is disclosed in which before the start of liquid-phase growth, a substrate and a solution are held in a 100% hydrogen atmosphere or a mixed gas atmosphere consisting of more than 80% of hydrogen and the rest of an inert gas, and immediately before the start of the liquid-phase growth, the atmosphere is changed to a mixed gas atmosphere consisting of not more than 60% of hydrogen and the rest of the inert gas.