发明名称 |
A method and apparatus for etching a gold metal layer using titanium hardmask |
摘要 |
Disclosed is an inventive method for etching a gold metallization in a plasma processing chamber. The method includes introducing a substrate having a gold layer and an overlying titanium hardmask layer into the plasma processing chamber. The hardmask is first etched using conventional etching techniques. Then a plasma is formed in the chamber from an oxidizing gas and an etching gas. The etching gas is preferably a hydrochloric acid containing gas which may contain a chlorine containing gas. In addition, N2 may be provided. The plasma is then used to etch the gold layer through the TiN or TiW hardmask. |
申请公布号 |
AU5492700(A) |
申请公布日期 |
2001.01.31 |
申请号 |
AU20000054927 |
申请日期 |
2000.06.14 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
GLADYS SO-WAN LO;DAVID W. MYTTON;GREGORY JAMES GOLDSPRING |
分类号 |
C23F4/00;H01L21/02;H01L21/302;H01L21/3065;H01L21/3213 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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