| 摘要 |
Method and system for cleaning and drying workpieces, such as semiconductor wafers and similar shapes, in a time interval that may be shorter than 40 seconds and in a single chamber with small footprint if desired. The workpiece is positioned in a cavity defined by two spaced apart disks, with two cavity walls having a separation distance that is no more than about 150 mu m larger than the workpiece thickness. A cleaning liquid and rinse liquid are injected for short time intervals. The workpiece is withdrawn from the cavity at a selected linear withdrawal rate, and simultaneously a selected drying liquid having relatively low surface tension, such as IPA, a hydrofluoroether, an ethylated hydrofluoroether or a hydrofluorocarbon, is transferred to the workpiece surface(s). Ultrasonic or megasonic vibrations of the cleaning liquid may be added to the cleaning step(s), the rinsing step(s), and/or the drying step. |
