| 发明名称 |
Capacitive probe for in situ measurement of wafer DC bias voltage |
| 摘要 |
<p>Apparatus for estimating voltage on a wafer located in a process chamber. A probe, embedded in a wall of the process chamber, detects voltage levels generated by a plasma within said process chamber. A relationship between the detected plasma voltage level and the wafer voltage is determined. <IMAGE></p> |
| 申请公布号 |
EP1072894(A2) |
申请公布日期 |
2001.01.31 |
| 申请号 |
EP20000116314 |
申请日期 |
2000.07.27 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LOEWENHARDT, PETER K.;SATO, ARTHUR;TODOROV, VALTENIN |
| 分类号 |
H01L21/66;G01R15/16;G01R19/00;G01R31/265;H01J37/32;H01L21/302;H01L21/3065;H05H1/46;(IPC1-7):G01R15/16 |
主分类号 |
H01L21/66 |
| 代理机构 |
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代理人 |
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