发明名称 Integrated circuit impedance device and method of manufacture therefor
摘要 A multi-purpose device that can serve as either a resistor, MOSFET or JFET is disclosed. The resistor is formed by selecting a first metal interconnect configuration, the MOSFET is formed by selecting a second metal interconnect configuration, and the JFET is formed by selecting a third metal interconnect configuration. Because of the dual transistor/resistor nature of this device, the density of a typical gate array that uses resistors may be increased. In addition, and because no special processing is typically required, the device may be desirable for use in other types of structures such as standard cells and custom logic.
申请公布号 US6180984(B1) 申请公布日期 2001.01.30
申请号 US19980219804 申请日期 1998.12.23
申请人 HONEYWELL INC. 发明人 GOLKE KEITH W.;FECHNER PAUL S.
分类号 H01L27/04;H01L21/82;H01L21/822;H01L21/8234;H01L21/84;H01L27/06;H01L27/08;H01L27/118;H01L27/12;(IPC1-7):H01L29/10 主分类号 H01L27/04
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