发明名称 Semiconductor memory device operable in burst mode and normal mode through improved switching operations
摘要 The present invention provides a semiconductor memory device operable both in a burst mode and in a normal mode, wherein the semiconductor memory device utilizes at least a single normal mode commend both for its original purpose in the normal mode and also for generating, in the burst mode, a burst stop commend to stop a burst mode operation of the semiconductor memory device.
申请公布号 US6181613(B1) 申请公布日期 2001.01.30
申请号 US19990342666 申请日期 1999.06.29
申请人 NEC CORPORATION 发明人 YOSHIDA SOUICHIROU
分类号 G11C11/413;G11C7/10;G11C11/401;G11C11/407;(IPC1-7):G11C7/00 主分类号 G11C11/413
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