发明名称 NOVEL PLASMA SOURCE FOR MATERIAL TREATMENT
摘要 PROBLEM TO BE SOLVED: To reduce capacitive coupling between a coil and plasma and to significantly reduce corrosion on the inner surface of a plasma tube. SOLUTION: This plasma source 200 has a coil 202 including a first coil segment 204 and a second coil segment 206, an RF power supply 208 connected to the coil 202, and an enclosure 210 disposed between the first coil segment 204 and the second coil segment 206. Thereby, the plasma source 200 retains a low coil voltage near a plasma tube and enables reduction in capacitive coupling between the coil 202 and the plasma. Addition to the symmetrical coil configuration, the plasma source 200 includes an asymmetrical coil configuration, having a matching network regulated such that the network supplies the low voltage to the vicinity of the plasma chamber, a self-resonance configuration, a ground coil center having coil segments physically grounded near the plasma chamber and driven in parallel, and a pair configuration having plural coil segment pairs driven in series or in parallel.
申请公布号 JP2001028298(A) 申请公布日期 2001.01.30
申请号 JP20000123028 申请日期 2000.04.24
申请人 APPLIED MATERIALS INC 发明人 BARNES MICHAEL;ISHIKAWA TETSUYA;NIAZI KAVEH F;TANAKA TSUTOMU
分类号 H01L21/18;C23C16/452;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;H05H1/46 主分类号 H01L21/18
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