发明名称 CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To improve dry etching resistance and to reduce chapping of a resist surface after dry etching by incorporating multifunctional epoxy compound and/or multifunctional vinyl ether compound into a composition. SOLUTION: A chemical amplification type resist composition contains a resin which becomes dissolvable in an alkali aqueous solution by an acid and an optical acid generating agent and further contains the multifunctional epoxy compound and/or multifunctional vinyl ether compound. The multifunctional epoxy compound and the multifunctional vinyl ether compound are compounds respectively having two or more epoxy groups or vinyl ether groups in a molecule and are used as a crosslinking agent. The resin which becomes dissolvable in the alkali aqueous solution by the acid includes a monomer unit having an alicyclic skeleton and a monomer unit having a lactone skeleton. The monomer unit having the alicyclic skeleton is selected from cyclohexyl (meth)acrylate or the like and the monomer unit having the lactone skeleton is selected from (meth)acrylate having a δ-valerolactone ring or the like.
申请公布号 JP2001027806(A) 申请公布日期 2001.01.30
申请号 JP19990199097 申请日期 1999.07.13
申请人 MITSUBISHI RAYON CO LTD 发明人 FUJIWARA TADAYUKI;WAKIZAKA YUKIYA
分类号 H01L21/027;G03F7/032;G03F7/039;G03F7/40 主分类号 H01L21/027
代理机构 代理人
主权项
地址