| 摘要 |
PROBLEM TO BE SOLVED: To enable cleaning/drying treatment, while particles, a hydrogen gas and the like are not generated and ozone water is easily generated by making a device smaller so that an object to be treated is subjected to an oxide film formation. SOLUTION: This cleaning/drying apparatus is provided with a cleaning section 1 for cleaning a semiconductor wafer W and a drying section 2 for drying the semiconductor wafer W. The cleaning section 1 is formed by a treatment bath 10 for reserving a chemical agent or a rinse liquid. This treatment bath 10 is connected with a chemical agent supply source 17 and a rinse supply source (pure water supply source 15) via a supply line (rinse supply line 14). Ozone water generating means 21 is provided in the rinse liquid supply line 14. Consequently, an oxide film is formed on the semiconductor wafer W surface treated with a chemical rinsing, and then the surface can be dried.
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