| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for reducing charging due to plasma processing of a semiconductor wafer. SOLUTION: A semiconductor wafer 118 is subjected to plasma processing, and contour dependent charging is produced. During at least a part of the time, during which the semiconductor wafer 118 is plasma processed, the semiconductor wafer 118 is irradiated with particles. Then, particles are removed from the semiconductor wafer 118 so that contour dependent charging is reduced.
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