| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method therefor, in which the contact resistance of a storage node contact is reduced by forming a heavily-doped region in a prescribed region of the source region of an access transistor. SOLUTION: This semiconductor device is provided with gate electrodes 2a and 2b on an element-forming region 1a of a silicon substrate. Sidewall insulating films 12, each having a width as large as half the distance between the electrodes 2a and 2b or more, are formed on both side surfaces of the electrodes 2a and 2b, respectively. A distance L between the gate electrode 2b and another gate electrode 2e is larger than the distance between the electrodes 2a and 2b, and an n+ source region 33b is formed in this region in a self-aligned manner. |
