| 摘要 |
PROBLEM TO BE SOLVED: To obtain a half tone type phase shift mask applicable for ArF laser or KrF laser by the user of molybdenum silicide by forming a phase shifter film, which is to be used for the phase shift mask, by using a reactive long slow spattering device. SOLUTION: The sputtering device is provided with a low pressure vacuum tank 3. The vacuum tank 3 has a reaction gas introducing port 14a, an inert gas introducing port 14b and a mixed gas introducing port 14c, and further, has two vacuum exhaust ports 14d and 14c, and furthermore, a target electrode 5 and a substrate holder 7. A vacuum pump is connected to the vacuum exhaust port 14d and vacuum exhaust port 14c, the target electrode 5 is provided with a magnet plate 9 having dual magnets 10, which are arranged on the double coaxial circles, on the rear surface. The substrate holder 7 is provided with a heater 11 on the rear surface. The molybenum silicide is used as a target when the film is formed. |
