| 摘要 |
PROBLEM TO BE SOLVED: To substantially reduce capacitance between wiring so that wiring delay is reduced substantially. SOLUTION: This semiconductor device has a plurality of wiring layers, extended on a semiconductor substrate and an insulating film coating the plurality of wiring layers and is characterized with hollow sections 9 selectively provided in the insulating film 5 between the wiring layers 2, 3. According to this constitution, the capacitance between wiring can be reduced substantially by forming the hollow section 9 (dielectric constantε=1), thereby substantially reducing wiring delay. Reliability can be improved, since the hollow sections 9 are not provided between all the wiring, but are provided selectively.
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