Upper redundant layer for damascene metallization

摘要

A multi-film damascene metal interconnect line for a semiconductor device and the method for manufacturing the interconnect line. The interconnect line has a redundant layer film included within the top surface of the interconnect line which reduces stress voiding and electromigration. The interconnect line is produced by depositing a redundant film part-way through the deposition of the bulk metal film and does not require additional polishing steps.