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发明名称
FETs having lightly doped drain regions that are shaped with counter and noncounter dorant elements
摘要
申请公布号
US6180470(B2)
申请公布日期
2001.01.30
申请号
US08/770046
申请日期
1996.12.19
申请人
发明人
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主分类号
代理机构
代理人
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