| 摘要 |
PROBLEM TO BE SOLVED: To form a resist pattern which has high antireflection effect, generates no intermixing, has high etching speed and is excellent in resolution, precision, etc., by incorporating a copolymer having two kinds of specific structure units and a solvent into a composition. SOLUTION: An antireflection film forming composition contains the copolymer having a structure unit expressed by formula I and a structure unit expressed by formula II and the solvent. In formula, R1 denotes hydrogen atom, halogen atom, 16C hydrocarbon group or the like and when plural R1 are present, they may be the same or different. R2 denotes hydrogen atom or methyl group and (m) denotes 1 to 9 integer. In formula II, R3 denotes hydrogen atom or methyl group and R4 denotes hydrogen atom or organic group. The copolymer contains the structural unit of formula I by 5 to 90 mole % and the structural unit of formula II by 5 to 80 mole % on the basis of total of the structural units expressed by the formula I and formula II and other structural units drived from unsaturated monomers. |
