发明名称 |
Structure for increasing the maximum voltage of silicon carbide power transistors |
摘要 |
A silicon carbide insulated gate power transistor is disclosed that demonstrates increased maximum voltage. The transistor comprises a field effect or insulated gate transistor with a protective region adjacent the insulated gate that has the opposite conductivity type from the source for protecting the gate insulator material from the degrading or breakdown effects of a large voltage applied across the device.
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申请公布号 |
US6180958(B1) |
申请公布日期 |
2001.01.30 |
申请号 |
US19970797535 |
申请日期 |
1997.02.07 |
申请人 |
COOPER, JR. JAMES ALBERT |
发明人 |
COOPER, JR. JAMES ALBERT |
分类号 |
H01L29/06;H01L29/24;H01L29/739;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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