发明名称 Multi-phase mask using multi-layer thin films
摘要 This invention provides a multi-layer multi-phase phase shifting photomask and a method for fabricating the same. The photomask of this invention uses a number of phase shifting layers each layer providing less than 180°optical phase shift to provide a total optical phase shift of 180°. The multi-layer multi-phase phase shifting photomask provides a gradual transition form no phase shift to 180° phase shift at pattern edges thereby improving image quality. The patterns in the layers of phase shifting material are formed using non critical etching steps. The thickness of the phase shifting layers is controlled by the deposition of the layers of phase shifting material which is relatively easy to control.
申请公布号 US6180290(B1) 申请公布日期 2001.01.30
申请号 US19980163385 申请日期 1998.09.30
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 HSU JUNG-HSIEN;HSU SUNG-MU
分类号 G03F1/00;(IPC1-7):G03F9/00 主分类号 G03F1/00
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