| 摘要 |
A memory configuration with a self-aligning non-integrated capacitor configuration includes a capacitor configuration and a transistor configuration which can be joined together in a self-aligning manner in such a way that each first contact of a transistor of the transistor configuration is connected to a respective second contact of a memory capacitor of the capacitor configuration. In order to align the two configurations, the second contacts are constructed in a protruding manner, and when joining takes place they engage in a structure including elevations. |
