| 摘要 |
A method of producing a semiconductor base member that can be used as a Silicon on Insulator (SOI) wafer is presented. To produce an SOI wafer, it is necessary to prepare a base member having a porous layer upon which a non porous layer is formed. To make the pore size distribution of a porous layer uniform, a surface comprising atom steps and terraces is formed on the surface of a silicon base material and made porous without eliminating the steps and terraces, and then a nonporous semiconductor single-crystal film is formed thereon.
|
