Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMS using disposable-oxide processing,申请号US09/211911-传众专利搜索

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发明名称	Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMS using disposable-oxide processing
摘要
申请公布号	US6180446(B2)	申请公布日期	2001.01.30
申请号	US09/211911	申请日期	1998.12.15
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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