Compound semiconductor device and method of manufacturing the same

摘要

There are provided a compound semiconductor device having a semiconductor multilayered structure, and a method of manufacturing the same. The semiconductor multilayered structure consists of a first recess etching stopper formed on a conductive layer of a compound semiconductor, a first semiconductor layer formed on the first recess etching stopper layer, a second recess etching stopper layer formed on the first semiconductor layer, and a second semiconductor layer formed on the second recess etching stopper layer.