| 摘要 |
A method for forming a low dielectric constant insulator in a monolithic substrate and the dielectric formed by the method. The method includes formation and patterning of a mask on a silicon substrate followed by anisotropic etching of the silicon to provide a dense array of deep holes. Isotropic etching may be used to form a cavity beneath the dense array of holes and coupling to bottoms of the holes. Sides of the holes are then thermally oxidized. A conventional dielectric is then formed, sealing tops of the holes. The conventional dielectric is optionally densified. Conventional chemical-mechanical polishing then planarizes the dielectric and further conventional processing may be carried out on the wafer to form active circuitry together with passive components such as high Q inductors. |
