| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor material of superior electrical characteristics, especially one formed into a films. SOLUTION: An insulating coat 102 is formed on a substrate 101 through gas phase reaction, and a semiconductor coat 103 is formed on the insulating coat 102, with the semiconductor coat 103 being formed into an island form, which is heated at 600-1,000 deg.C so that the insulating coat is contracted for providing a semiconductor device having superior electrical characteristics. |
