| 摘要 |
PROBLEM TO BE SOLVED: To reduce leakage current by providing a second insulation film on first semiconductor regions in semiconductor regions having first conductive regions, a first insulation film, first semiconductor regions and second conductive regions and providing third conductive regions on the surface of the second insulation film. SOLUTION: As for sources 250 and drains 350, a gate 500 brings the electric field effect on a channel 150 through an insulation film 980 from both sides. Carriers tunneling an insulation film 931 between the drain 350 and the channel 150 are controlled by the gate 500. In this structure, the electrode 350 can strongly suppress the leakage current because of a barrier 931 sandwiched between the channel 150 and this electrode. When the electrode 250 uses a polycrystalline Si-doped at a high concentration, the electrode becomes a channel feed source and hence n- and p-type devices can be formed according to the conductivity type depending on an impurity. |
