| 摘要 |
A magnetoresistance effect type head of the present invention has a spin valve type magnetoresistance effect film. A pulse magnetic field process is carried out wherein a pulse magnetic field of the pulse magnetic field intensity I of 5 kOe to 40 kOe is intermittently applied to the magnetoresistance effect film upon executing a so-called magnetization orthogonalization process. As a result, there can be obtained the magnetoresistance effect type head, wherein the orthogonalization of magnetization of a soft magnetic layer and a ferromagnetic layer is achieved under a very low temperature condition, i.e. without heating up to a blocking temperature Tb, and over a short time, so that deterioration of a magnetic characteristic is quite small, a head characteristic is stable and a head output is large.
|
