发明名称 SEMICONDUCTOR DEVICE ELECTRICAL CHARACTERISTIC EVALUATION APPARATUS
摘要 PROBLEM TO BE SOLVED: To obtain a semiconductor device electrical characteristics evaluation apparatus, which executes analysis of the electrical characteristics of a nonvolatile memory having a three-dimensional form in a two-dimensional simulation. SOLUTION: This evaluation apparatus has a means 11 for reading information on the impurity density in the interior of a semiconductor device, the material and the external shape of the device and the like, which results from two-dimensional process simulation, a means 12 for reading information on the material, the external shape and the like in the direction vertical to the section of the device which is the result of the two-dimensional process simulation, a means 13 for executing a capacity simulation about the shape of the section in the vertical direction of the device, a means 14 for changing the external shape such as the forms of the thickness of an insulating film which are the results of the two-dimensional process simulation from the result of the capacity simulation, a means 15 for specifying the conditions of calculation of a terminal voltage, the time of a voltage application and the like for making device simulation, a means 15 for making a device simulation for calculating potential and electron-hole density distribution in the interior of the device, the current- voltage characteristics of the element and the like and a means 17 for outputting the results through a means desired by users.
申请公布号 JP2001028405(A) 申请公布日期 2001.01.30
申请号 JP19990201223 申请日期 1999.07.15
申请人 MATSUSHITA ELECTRONICS INDUSTRY CORP 发明人 OHARA KANJI;MINAMI RIE
分类号 H01L21/8247;G06F17/50;H01L27/115;H01L29/00;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 主分类号 H01L21/8247
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