发明名称 |
Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates |
摘要 |
Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one carboxylate group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
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申请公布号 |
US6180420(B1) |
申请公布日期 |
2001.01.30 |
申请号 |
US19980208543 |
申请日期 |
1998.12.09 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
HINTERMAIER FRANK S.;VAN BUSKIRK PETER C.;ROEDER JEFFREY F.;HENDRIX BRYAN C.;BAUM THOMAS H.;DESROCHERS DEBRA A. |
分类号 |
C23C16/40;C23C16/56;C30B25/02;H01L21/02;H01L21/314;H01L21/316;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L21/00 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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