发明名称 SPUTTERING METHOD AND DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a sputtering method capable of forming a thin film of uniform thickness on the surface of a substrate in a rotary type sputtering device having a rectangular planar target provided with a magnetic circuit for magnetron discharge and to provide the device. SOLUTION: At the time of executing film formation in such a manner that voltage is applid to the space between a substrate moving on an orbit having a fixed curvature and a rectangular planar target 1 loaded with two or more magnetic circuits 5a and 5b for magnetron discharge in the turning radius direction [a-b line] of the substrate, and the target atoms are sprung out from the rectangular planar target 1, the magnetic fields 7a and 7b of the plural magnetic circuits 5a and 5b for magnetron discharge arranged in the turning radius direction [a-b line] of the substrate are controlled to regulate the region to be sputtered in the target 1, and, while the difference in the inner and outer circumferences of the film thickness of the thin film formed on the substrate is corrected, film formation is executed.
申请公布号 JP2001026870(A) 申请公布日期 2001.01.30
申请号 JP19990199680 申请日期 1999.07.14
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OKUMA TAKAFUMI;YAMANISHI HITOSHI;SHINGO KENTARO;MUNEOKA ATSUSHI
分类号 C23C14/35;(IPC1-7):C23C14/35 主分类号 C23C14/35
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