发明名称 |
FETs having lightly doped drain regions that are shaped with counter and noncounter dorant elements |
摘要 |
Lifetime of a short-channel NMOS device is increased by modifying distributions of electrically active LDD dopant at boundaries of the device's LDD regions. The LDD dopant distributions are modified by implanting counter-dopants at the boundaries of the LDD regions. Group III counter-dopants such as boron and group IV elements such as silicon alter activation properties of the LDD dopant. The dopant distributions are modified at the device's n-junctions to reduce the maximum electric field displacement at an interface defined by the device's gate and substrate. The dopant distributions can be further modified to shape the n-junctions such that hot carriers are injected away from the gate.
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申请公布号 |
US6180470(B1) |
申请公布日期 |
2001.01.30 |
申请号 |
US19960770046 |
申请日期 |
1996.12.19 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
ARONOWITZ SHELDON;KHAN LAIQUE;KIMBALL JAMES |
分类号 |
H01L21/265;H01L21/336;H01L21/8234;H01L27/088;H01L29/10;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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