发明名称 |
Very low thermal budget channel implant process for semiconductors |
摘要 |
An ultra-low thermal budget process is provided for channel implant by using a reverse process sequence where a conventional MOS transistor is formed without the channel implant. The originally deposited polysilicon gate is removed, a nitride film deposition and etch is used to form a nitride spacer with a predetermined configuration, and a self-aligned channel implant is performed. After the channel implantation, anneal and super-retrograded doping, the nitride spacer and the gate oxide are removed for subsequent regrowth of a second gate oxide and a polysilicon deposition to form a second polysilicon gate.
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申请公布号 |
US6180468(B1) |
申请公布日期 |
2001.01.30 |
申请号 |
US19980177774 |
申请日期 |
1998.10.23 |
申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
YU BIN;ISHIDA EMI;LUNING SCOTT;THURGATE TIMOTHY |
分类号 |
H01L21/336;H01L29/10;(IPC1-7):H01L21/336;H01L21/320 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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