| 摘要 |
PROBLEM TO BE SOLVED: To form an ohmic electrode even when the concentration of a carrier in an n-type ZnSe substrate is low by setting a conductive layer made of In or In alloy to the fixing material between the n-type ZnSe substrate and an electrode substrate for functioning as the ohmic electrode to the n-type ZnSe substrate. SOLUTION: An LED chip 3 is equipped with an n-type ZnSe crystal substrate 7 and an epitaxial light emission layer 8, and is fixed to a lead frame 4a via a conductive layer 9 made of In or In alloy. Then, the conductive layer 9 is subjected to ohmic contact with the n-type ZnSe crystal substrate 7, and at the same time has a function for bonding the n-type ZnSe crystal substrate 7 to the lead frame 4a, thus obtaining the ohmic contact by a method for allowing the n-type ZnSe crystal substrate 7 to be directly brought into contact with fused In without forming a deposition electrode on the rear surface of the n-type ZnSe crystal substrate 7. Also, silver paste is not used, thus preventing a rapid deterioration of an element. |
