发明名称 Polishing pad and process for forming same
摘要 A process for joining together a first polishing pad with a second polishing pad to form a larger pad for a machine that performs chemical-mechanical polishing of silicon wafers. The process includes laying a first polishing pad on a surface and laying a second pad on the surface so that a portion of the second pad overlies a portion of the first pad, creating an overlap region. The first and second pads in the overlap region are cut through to form a first cut edge on the first pad and a second cut edge on the second pad, the first and second cut edges having shapes which are complementary. The first and second cut edges are brought into engagement, and the first pad is joined to the second pad at the first and second cut edges. Cutting is done in a first direction that is generally opposite to a second direction that a polishing fluid is expected to move on an surface of the pad during operation of the polishing machine, thereby sloping the first and second cut edges away from the second direction to inhibit passage of polishing fluid between the first and second cut edges.
申请公布号 US6179950(B1) 申请公布日期 2001.01.30
申请号 US19990252698 申请日期 1999.02.18
申请人 MEMC ELECTRONIC MATERIALS, INC. 发明人 ZHANG GUOQIANG (DAVID);VOGELGESANG RALPH V.;POTTS GREGORY;ERK HENRY F.
分类号 B24B37/00;B24B37/04;B24D11/06;B24D13/12;B24D13/14;C08J5/14;H01L21/304;(IPC1-7):B32B31/00 主分类号 B24B37/00
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